Advanced Micro Devices Corporation

Jiang Tao

Peng Fang

A method for determining the electrical thickness of a very thin gate oxide layer of a MOSFET that is subject to relatively high leakage current owing to its thinness includes measuring first and second frequency-dependent capacitances C , C and then using the capacitances to render a corrected capacitance. The electrical thickness is then determined using not the measured capacitances, but rather the corrected capacitance, to render a comparatively more accurate value of gate oxide electrical thickness T .

Method for determining transistor gate oxide thickness

Plasma induced degradation of thin gate dielectric layers, e.g., silicon dioxide layers of less than 50 .ANG., is assessed by impressing a constant current density across the gate dielectric layer and measuring the resulting stress induced leakage current as a function of time. The sensitivity of the stress induced leakage current to traps generated in a thin gate dielectric layer enables the use of stress induced leakage current measurements to monitor plasma induced damage during various phases of semiconductor manufacturing.

Assessing plasma induced gate dielectric degradation with stress induced

There is provided an improved metallization stack structure so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.

Metallization stack structure to improve electromigration resistance and

There is provided an improved metallization stack structure and a method for fabricating the same so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.

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Jiang Tao