Jiang-Kai Zuo

Title: Jiang-Kai Zuo: Innovator in Semiconductor Technology

Jiang-Kai Zuo is a notable inventor based in Austin, TX, specializing in semiconductor technology. He has made significant contributions to the field, particularly with his innovative patent related to deep trench isolation in integrated semiconductor devices.

Latest Patents

Jiang-Kai Zuo holds a patent for a technology titled "Deep Trench Isolation." This patent describes an integrated semiconductor device that includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region situated over a first portion of the buried layer, and an isolation trench surrounding the isolated region. Additionally, the invention features a punch-through structure that encompasses at least a portion of the isolation trench. This punch-through structure consists of a second portion of the buried layer, a first region located over the second portion with a second conductivity type, and a second region positioned over the first region, which has the first conductivity type.

Career Highlights

Jiang-Kai Zuo is currently employed at NXP USA, Inc., where he continues to advance his research and development in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of integrated circuits.

Collaborations

Some of Jiang-Kai Zuo's coworkers include Xu Cheng and Daniel J Blomberg, who collaborate with him on various projects within the semiconductor industry.

Conclusion

Jiang-Kai Zuo's contributions to semiconductor technology, particularly through his patent on deep trench isolation, highlight his innovative spirit and dedication to advancing the field. His work at NXP USA, Inc. continues to influence the development of integrated semiconductor devices.