Nxp USA, Inc.

Jiang-Kai Zuo

Daniel J Blomberg

Zhihong Zhang

Xu Cheng

An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located over a first portion of the buried layer, and an isolation trench located around the isolated region. A punch-through structure is located around at least a portion of the isolation trench. The punch-through structure includes a second portion of the buried layer, a first region located over the second portion of the buried layer, the first region having a second conductivity type, and a second region located over the first region, the second region having the first conductivity type.

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Austin, TX, United States of America

Jiang-Kai Zuo