Jian-Sing Liou

Title: Innovations by Jian-Sing Liou in DDR Memory Technology

Introduction

Jian-Sing Liou is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in DDR (Double Data Rate) memory devices. His innovative work has led to the development of a unique patent that enhances the performance and reliability of memory systems.

Latest Patents

Jian-Sing Liou holds a patent titled "Write leveling in DDR memory device and operating method thereof." This patent describes a write leveling system that includes a frequency divider, a signal processing circuit, and a data control circuit. The frequency divider performs a frequency dividing operation on a clock signal to generate multiple frequency-divided clock signals. The signal processing circuit processes a data strobe signal to produce multiple processed data strobe signals. The data control circuit generates a data signal based on these signals, indicating whether the rising edge of the data strobe signal is at a first level or a second level of the clock signal, with the first level being higher than the second level. This innovation is crucial for improving the efficiency of DDR memory devices.

Career Highlights

Jian-Sing Liou is currently employed at Elite Semiconductor Microelectronics Technology Inc., where he continues to work on advancing semiconductor technologies. His expertise in memory devices has positioned him as a valuable asset in the industry.

Collaborations

One of his notable coworkers is Shu-Han Nien, with whom he collaborates on various projects related to semiconductor innovations.

Conclusion

Jian-Sing Liou's contributions to DDR memory technology through his patent demonstrate his commitment to innovation in the semiconductor field. His work not only enhances memory device performance but also showcases the importance of collaboration in technological advancements.