Jian-Li Lin

Title: Innovations of Jian-Li Lin in High-Electron Mobility Transistors

Introduction

Jian-Li Lin is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron mobility transistors. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Jian-Li Lin holds a patent for a high-electron mobility transistor and the method for fabricating the same. This invention includes a substrate, a gate electrode, a drain electrode, a source electrode, and a first field plate. The substrate features an active region, with the gate electrode positioned on it. The drain electrode is located on one side of the gate electrode, while the source electrode is on the opposite side. The first field plate is electrically connected to the source electrode and extends towards the drain electrode. Notably, the overlapping area of the first field plate and the gate electrode is smaller than that of the gate electrode and the active region. This design enhances the transistor's performance, making it a valuable contribution to the field.

Career Highlights

Jian-Li Lin is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals in the field, furthering the development of innovative technologies.

Collaborations

Some of Jian-Li Lin's coworkers include Cheng-Guo Chen and Ta-Kang Lo. Their collaborative efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Jian-Li Lin's contributions to high-electron mobility transistors exemplify the importance of innovation in the semiconductor industry. His work not only enhances electronic device performance but also paves the way for future advancements in technology.