This inventor holds 1 USPTO granted patent. Top assignee: Aicestar Technology (Suzhou) Corporation. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Innovations of Jian-Bin Zheng in SRAM Technology
Introduction
Jian-Bin Zheng is a notable inventor based in Province, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Static Random-Access Memory (SRAM). His innovative approach has led to advancements that enhance the performance and efficiency of memory systems.
Latest Patents
Jian-Bin Zheng holds a patent for an SRAM and a method of controlling the SRAM. This patent includes a unique SRAM design that features a tracking column, a normal column, a cell voltage control circuit, and a cell voltage pull-down circuit. The SRAM is designed to manage cell voltages effectively during write operations, ensuring optimal performance and reliability.
Career Highlights
Zheng is currently employed at Aicestar Technology (Suzhou) Corporation, where he continues to work on cutting-edge technologies in memory systems. His expertise in SRAM design and control methods has positioned him as a key player in the industry.
Collaborations
Jian-Bin Zheng collaborates with talented colleagues, including Jin-Feng Zhang and Zhao-Yong Zhang. Together, they contribute to innovative projects that push the boundaries of memory technology.
Conclusion
Jian-Bin Zheng's work in SRAM technology exemplifies the impact of innovative thinking in the field of electronics. His contributions are paving the way for advancements that will benefit future memory systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile