The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Nov. 17, 2008
Jin-feng Zhang, Jiangsu Province, CN;
Jian-bin Zheng, Jiangsu Province, CN;
Zhao-yong Zhang, Jiangsu Province, CN;
Qi-shuang Yao, Jiangsu Province, CN;
Jin-Feng Zhang, Jiangsu Province, CN;
Jian-Bin Zheng, Jiangsu Province, CN;
Zhao-Yong Zhang, Jiangsu Province, CN;
Qi-Shuang Yao, Jiangsu Province, CN;
Aicestar Technology (SuZhou) Corporation, Soochow, CN;
Abstract
An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.