Shanghai, China

Jia Ren

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.4

ph-index = 1


Company Filing History:


Years Active: 2016-2023

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2 patents (USPTO):

Title: Jia Ren - Innovator in Semiconductor Technology

Introduction

Jia Ren is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to manufacturing methods and device design.

Latest Patents

Jia Ren's latest patents include a semiconductor device and a manufacturing method thereof. The manufacturing method involves providing a substrate with a storage region, forming stacked gates of storage transistors, and creating side walls on either side of each stacked gate. This innovative approach addresses the issue of stacked gate collapse during the ion implantation process, ultimately improving yield. Another patent focuses on methods for fabricating semiconductor devices, where gate structures are formed on a substrate's surface, and trenches are created on both sides of each gate structure. The trenches are filled with stress layers that are ion-doped and annealed, leading to the formation of source and drain regions that are coplanar with the substrate's surface.

Career Highlights

Jia Ren has worked with notable companies in the semiconductor industry, including Shanghai Huali Microelectronics Corporation and Semiconductor Manufacturing International Corporation. His experience in these organizations has contributed to his expertise in semiconductor device fabrication and innovation.

Collaborations

Jia Ren has collaborated with talented individuals in his field, including Pengkai Xu and Fulong Qiao. These partnerships have likely fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Jia Ren's contributions to semiconductor technology through his patents and career experiences highlight his role as an influential inventor in the industry. His innovative methods and collaborative efforts continue to shape the future of semiconductor devices.

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