Jia-Bin Yeh

Title: Innovations of Jia-Bin Yeh

Introduction

Jia-Bin Yeh is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on NMOS structures and their manufacturing methods.

Latest Patents

Jia-Bin Yeh holds a patent for an NMOS structure and manufacturing method. This innovative NMOS structure includes a semiconductor substrate, a dielectric structure, a source doped region, a drain doped region, a channel region, a gate structure, and two isolation P-type wells. The dielectric structure is formed in the semiconductor substrate to define an active region, where the source/drain doped region and the channel region are formed. The channel region features two opposite first sides and two opposite second sides. The source/drain doped region is formed between the two second sides and the dielectric structure. The gate structure is positioned on the semiconductor substrate, covering part of the dielectric structure beside the first sides. The two isolation P-type wells are created in the dielectric structure not covered by the gate structure, surrounding the periphery of the source/drain doped region and ending at the respective second side. He has 1 patent to his name.

Career Highlights

Jia-Bin Yeh is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further develop his expertise in semiconductor technologies.

Collaborations

He has collaborated with notable colleagues such as Hau-Yuan Huang and Chia-Chen Tsai, contributing to advancements in their field.

Conclusion

Jia-Bin Yeh's innovative work in NMOS structures showcases his expertise and dedication to semiconductor technology. His contributions continue to influence the industry positively.