Ji-Wei Liou

Title: The Innovative Contributions of Ji-Wei Liou

Introduction

Ji-Wei Liou is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of flash memory cells. His innovative methods have paved the way for advancements in memory storage solutions.

Latest Patents

Ji-Wei Liou holds a patent for a "Method of fabricating a trenched flash memory cell." This patent describes a process that involves forming shallow trench isolation structures to enclose an active area in a silicon substrate. The method includes creating a doped region, depositing an isolation layer, and performing a photo and etching process to form trenches. The invention further details the formation of a tunnel oxide layer, a floating gate, and an ONO dielectric layer within the trenches. Additionally, it outlines the steps for creating controlling gates and a self-alignment common source, culminating in the formation of a silicide layer on the controlling gates and common source.

Career Highlights

Ji-Wei Liou is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has contributed to the development of advanced memory technologies, enhancing the performance and efficiency of flash memory devices.

Collaborations

Throughout his career, Ji-Wei Liou has collaborated with notable colleagues, including Chih-Jen Huang and Pao-Chuan Lin. These collaborations have fostered innovation and have been instrumental in the success of various projects within the semiconductor field.

Conclusion

Ji-Wei Liou's contributions to the semiconductor industry, particularly through his patented methods for fabricating flash memory cells, highlight his role as an influential inventor. His work continues to impact the development of memory technologies, showcasing the importance of innovation in this rapidly evolving field.