Cohoes, NY, United States of America

Ji Ung Lee

This inventor holds 8 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2002-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Ung Lee. Retrieved from https://idiyas.com/inventor/ji-ung-lee-vrzggvu0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 75.0

Average Co-Inventor Count = 1.5

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Boise, ID (US) (2002 - 2004)
  • Cohoes, NY (US) (2002 - 2008)

Company Filing History:


Years Active: 2002-2008

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8 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ji Ung Lee

Introduction

Ji Ung Lee is a prominent inventor based in Cohoes, NY (US), known for his significant contributions to the field of semiconductor technology. With a total of 8 patents to his name, Lee has made remarkable advancements in the fabrication methods of field effect transistors and field emission devices.

Latest Patents

Lee's latest patents focus on field effect transistor fabrication methods, field emission device fabrication methods, and operational methods for field emission devices. One of his notable inventions includes a field effect transistor that features a semiconductive layer designed to form a channel region. This invention also incorporates a pair of spaced conductively doped semiconductive regions that are in electrical connection with the channel region. Additionally, the design includes a gate positioned between the semiconductive regions and a gate dielectric layer that aligns the gate with the channel region. The innovative use of chemical-mechanical polishing allows for self-alignment of the gate with the channel region. Another aspect of his work involves a field emission device that utilizes a transistor to control electron emission from an emitter. His improved structure and method enable a reduced distance between the emitter tip and the gate structure, which is crucial for applications in beam optics and power dissipation.

Career Highlights

Ji Ung Lee has established himself as a key figure in the semiconductor industry through his work at Micron Technology Incorporated. His expertise in the development of advanced semiconductor devices has positioned him as a valuable asset to the company.

Collaborations

Lee has collaborated with notable colleagues, including Benham Moradi and David H Wells, contributing to the advancement of technology in their field.

Conclusion

Ji Ung Lee's innovative work in semiconductor technology has led to significant advancements in field effect transistors and field emission devices. His contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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