Suwon-si, South Korea

Ji-Sung Kim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Sung Kim. Retrieved from https://idiyas.com/inventor/ji-sung-kim-so0px3pj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ji-Sung Kim: Innovator in Semiconductor Technology

Introduction

Ji-Sung Kim is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor memory device.

Latest Patents

Ji-Sung Kim holds a patent for a semiconductor memory device. This device includes a substrate with a first impurity region and a second impurity region. It features a first word line positioned between these two impurity regions. Additionally, a bit line is connected to the first impurity region, while a first conductive pattern is linked to the second impurity region. The device also incorporates a first partial electrode and a second partial electrode on the first conductive pattern. A first dielectric layer is in contact with the upper surfaces of both partial electrodes, and a common electrode is placed on the first dielectric layer. Notably, the areas of the upper surfaces of the first and second partial electrodes may differ.

Career Highlights

Ji-Sung Kim is currently employed at Samsung Electronics Ltd. His role at this leading technology company allows him to further his research and development in semiconductor devices. His work is instrumental in advancing the capabilities of memory technology.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Ji-Sung Kim's contributions to semiconductor technology exemplify the innovative spirit of modern inventors. His patent for a semiconductor memory device showcases his expertise and commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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