The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Oct. 26, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmin Park, Suwon-si, KR;

Ji-Sung Kim, Suwon-si, KR;

Hanjin Lim, Suwon-si, KR;

Hyungsuk Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

A semiconductor device may include a substrate including a first impurity region and a second impurity region; a first word line in a region of the substrate with the first impurity region on one side of the first word line and the second impurity region on an other side of the first word line; a bit line connected to the first impurity region; a first conductive pattern connected to the second impurity region; a first partial electrode and a second partial electrode on the first conductive pattern; a first dielectric layer in contact with an upper surface of the first partial electrode and an upper surface of the second partial electrode; and a common electrode on the first dielectric layer. An area of the upper surface of the first partial electrode may be different from an area of the upper surface of the second partial electrode.


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