Ansan, South Korea

Ji-Sung Cheon

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Sung Cheon. Retrieved from https://idiyas.com/inventor/ji-sung-cheon-j3j2kul8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2020-2022

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4 patents (USPTO):Explore Patents

Title: Ji-Sung Cheon: Innovator in Vertical Memory Devices

Introduction

Ji-Sung Cheon is a prominent inventor based in Ansan-si, South Korea. He has made significant contributions to the field of memory technology, particularly in the development of vertical memory devices. With a total of 4 patents to his name, Cheon continues to push the boundaries of innovation in this area.

Latest Patents

Cheon's latest patents focus on advanced vertical memory devices and methods of manufacturing them. One of his notable inventions is a vertical memory device that includes a gate structure with a first gate electrode positioned on a peripheral circuit region of a substrate. This substrate contains both a cell region and a peripheral circuit region. The device features multiple second gate electrodes that are sequentially stacked on the cell region, spaced apart in a vertical direction. Additionally, a channel extends vertically through at least one of the second gate electrodes, while a first insulating interlayer covers the gate structure on the peripheral circuit region. The cross-section of the insulating interlayer has a polygonal shape, enhancing the device's functionality.

Another patent describes a vertical memory device that comprises gate electrodes on a substrate and a channel. The gate electrodes are arranged vertically, and the channel includes three portions, with the second portion having a slanted sidewall that gradually decreases in width from the bottom to the top. This innovative design aims to improve the efficiency and performance of memory devices.

Career Highlights

Ji-Sung Cheon is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of memory technology advancements. Cheon's expertise in vertical memory devices has positioned him as a key player in the industry.

Collaborations

Throughout his career, Cheon has collaborated with talented individuals such as Seok-Cheon Baek and Yoon-Hwan Son. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Ji-Sung Cheon is a distinguished inventor whose work in vertical memory devices has made a significant impact on the technology landscape. His innovative patents and contributions to Samsung Electronics Co., Ltd. highlight his dedication to advancing memory technology. Cheon's ongoing efforts continue to shape the future of this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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