The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Sep. 30, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ji-Sung Cheon, Ansan-si, KR;
Seok-Cheon Baek, Hwaseong-si, KR;
Samsung Electronics Co.. Ltd., Gyeonggi-do, KR;
Abstract
A vertical memory device includes a gate structure including a first gate electrode on a peripheral circuit region of a substrate, the substrate containing a cell region and the peripheral circuit region, a plurality of second gate electrodes sequentially stacked on the cell region of the substrate, the plurality of second gate electrodes spaced apart from each other in a vertical direction to an upper surface of the substrate, a channel extending in the vertical direction on the cell region of the substrate and extending through at least one of the second gate electrodes, and a first insulating interlayer covering the gate structure on the peripheral circuit region of the substrate, a cross-section in one direction of an upper surface of a portion of the first insulating interlayer overlapping the gate structure in the vertical direction having a shape of a portion of a polygon.