Ji Sung Cheon is a prominent inventor based in Ansan-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work is primarily associated with Samsung Electronics Co., Ltd., where he continues to push the boundaries of innovation.

Latest Patents

One of Ji Sung Cheon's latest patents is for a three-dimensional semiconductor device. This device features an upper substrate and a gate-stacked structure that includes gate electrodes arranged within a memory cell array region. The design allows for a staircase shape in the extension region, enhancing the device's functionality. Another notable patent involves a semiconductor device that includes a cutting region with a height greater than that of a channel structure. This device comprises a peripheral circuit region on a lower substrate, along with memory cell regions on upper substrates, showcasing advanced engineering in semiconductor design.

Career Highlights

Throughout his career, Ji Sung Cheon has been recognized for his innovative approaches to semiconductor technology. His patents reflect a deep understanding of complex electronic systems and a commitment to advancing the industry. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the development of next-generation semiconductor devices.

Collaborations

Ji Sung Cheon has collaborated with several talented individuals in his field, including Seok Cheon Baek and Geun Won Lim. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Ji Sung Cheon's contributions to semiconductor technology are noteworthy and impactful. His innovative patents and collaborative efforts at Samsung Electronics Co., Ltd. continue to shape the future of the industry. His work exemplifies the spirit of innovation that drives technological advancement.

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