Yongin-si, South Korea

Ji-Hak Yu


Average Co-Inventor Count = 14.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Ji-Hak Yu

Introduction

Ji-Hak Yu is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of memory devices, showcasing his expertise and innovative spirit. His work is particularly recognized within the technology sector, where he is associated with Samsung Electronics Co., Ltd.

Latest Patents

Ji-Hak Yu holds a patent for a memory device and method of disposing conduction lines of the same. This invention includes a memory cell array region that features column selection signal lines formed in a first column conduction layer, extending in a column direction. Additionally, it incorporates global input-output data lines formed in a second column conduction layer, which is distinct from the first, also extending in the column direction. The design further includes power lines situated in a shield conduction layer between the two column conduction layers. This innovative arrangement helps reduce noise in the signal and power lines, thereby enhancing the overall performance of the memory device.

Career Highlights

Throughout his career, Ji-Hak Yu has demonstrated a commitment to advancing technology through his inventive work. His patent reflects a deep understanding of memory device architecture and the challenges associated with signal integrity. His contributions are vital in the ongoing development of more efficient memory technologies.

Collaborations

Ji-Hak Yu has collaborated with talented colleagues, including Young-Ju Kim and Su-a Kim. These partnerships have likely fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ji-Hak Yu's contributions to memory device technology exemplify the impact of innovative thinking in the tech industry. His patent not only addresses current challenges but also paves the way for future advancements in memory technology.

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