Daejeon, South Korea

Ji-Beom Yoo

This inventor holds 2 USPTO granted patents. Top assignees: Electronics and Telecommunications Research Institute, Korea Telecommunication Authority. Active years: 1994-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Beom Yoo. Retrieved from https://idiyas.com/inventor/ji-beom-yoo-gx0j6nbl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1994-1996

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2 patents (USPTO):Explore Patents

Title: The Innovations of Ji-Beom Yoo

Introduction

Ji-Beom Yoo is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to laser devices and photodiodes. His work has implications for various applications in electronics and telecommunications.

Latest Patents

Ji-Beom Yoo's latest patents include a semiconductor laser device and a method for manufacturing the same. This patent outlines a comprehensive method for creating a semiconductor laser device by sequentially forming various layers on an InP substrate. The process involves forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer. The method also includes steps for creating a patterned dielectric layer and a p-electrode stripe layer, followed by an annealing process and etching to expose the photo-waveguide layer. The result is a laser device with improved operating characteristics due to reduced ohmic contact resistance.

Another notable patent is for an avalanche photodiode that features a multiplication layer with a superlattice structure. This invention utilizes a strained superlattice structure as a multiplication layer, which enhances the performance of the photodiode. The design includes an n-type InP substrate and various layers of InAlAs and InGaAs, culminating in a structure that minimizes surface leakage current and optimizes ohmic contact.

Career Highlights

Throughout his career, Ji-Beom Yoo has worked with esteemed organizations such as the Electronics and Telecommunications Research Institute and the Korea Telecommunication Authority. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Ji-Beom Yoo has collaborated with notable colleagues, including Chan-Yong Park and Hong-Man Kim. Their combined expertise has contributed to advancements in the field of semiconductor devices.

Conclusion

Ji-Beom Yoo's contributions to semiconductor technology through his patents and career achievements highlight his role as an influential inventor. His work continues to impact the electronics and telecommunications industries significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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