Jheng-Long Chen

Title: Jheng-Long Chen: Innovator in Metal Oxide Deposition Technology

Introduction

Jheng-Long Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of deposition technologies. With a total of 2 patents, his work has advanced the methods used in forming metal oxide layers, which are crucial in various electronic applications.

Latest Patents

Jheng-Long Chen's latest patents include innovative technologies that enhance the deposition process. One of his patents is a "Deposition apparatus and method of forming metal oxide layer using the same." This invention features a deposition apparatus that includes a process chamber, a wafer platen, and a shower head. The shower head is designed with a hydrophobic film and multiple dispensing holes for reaction gases, facilitating the efficient formation of metal oxide layers.

Another significant patent is the "Method of forming metal oxide layer using deposition apparatus." This method outlines a process where a substrate with a target layer is placed in a deposition apparatus. Gases are introduced through a shower head coated with a hydrophobic film to create a metal oxide film on the target layer. The process includes forming a patterned photoresist layer and using it to pattern the metal oxide film, ultimately allowing for precise fabrication of electronic components.

Career Highlights

Jheng-Long Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has positioned him as a key player in advancing deposition technologies.

Collaborations

Throughout his career, Jheng-Long Chen has collaborated with notable colleagues, including Ming-Fa Wu and Wen-Lung Ho. These collaborations have fostered innovation and contributed to the successful development of his patented technologies.

Conclusion

Jheng-Long Chen's contributions to the field of semiconductor manufacturing through his innovative patents have significantly impacted the industry. His work continues to influence the methods used in forming metal oxide layers, showcasing his expertise and dedication to advancing technology.