The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Jul. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Wu, Kaohsiung, TW;

Wen-Lung Ho, Hsinchu County, TW;

Jheng-Long Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/04 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4404 (2013.01); C23C 16/042 (2013.01); C23C 16/403 (2013.01); C23C 16/4412 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/45591 (2013.01); C23C 16/52 (2013.01); H01L 21/67011 (2013.01); C23C 16/4408 (2013.01);
Abstract

A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.


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