Jhao-Cheng Ye

Title: Jhao-Cheng Ye: Innovator in Epitaxial Structures

Introduction

Jhao-Cheng Ye is a prominent inventor based in Yunlin County, Taiwan. He has made significant contributions to the field of epitaxial structures, holding a total of 5 patents. His work focuses on innovative methods and structures that enhance the performance of electronic devices.

Latest Patents

Among his latest patents is an epitaxial structure with air voids in the shape of a trapezoid. This invention includes a substrate, a first epitaxial layer, and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate, defining a plurality of slanting air voids tapering away from the substrate, with an opening over each of the slanting air voids. The second epitaxial layer is then disposed on the first epitaxial layer, collectively defining the slanting air voids in a trapezoidal shape. Another notable patent is the epitaxial structure and epitaxial growth method for forming an epitaxial layer with cavities, which shares similar structural features and innovations.

Career Highlights

Jhao-Cheng Ye is currently employed at Lextar Electronics Corporation, where he continues to develop cutting-edge technologies in the field of epitaxy. His work has been instrumental in advancing the capabilities of electronic components, making them more efficient and effective.

Collaborations

He has collaborated with notable coworkers, including Jun-Rong Chen and Hsiu-Mei Chou, contributing to a dynamic and innovative work environment.

Conclusion

Jhao-Cheng Ye's contributions to the field of epitaxial structures demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of material science and engineering, paving the way for future advancements in technology.