The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jul. 01, 2013
Applicant:
Lextar Electronics Corporation, Hsinchu, TW;
Inventors:
Assignee:
LEXTAR ELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); C30B 23/04 (2006.01); C30B 25/04 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H01L 21/0265 (2013.01); C30B 23/04 (2013.01); C30B 25/04 (2013.01); C30B 29/406 (2013.01);
Abstract
An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.