Jhang W Lee

Title: Jhang W Lee: Innovator in Semiconductor Technology

Introduction

Jhang W Lee is a prominent inventor based in Richardson, TX (US), known for his contributions to semiconductor technology. He has been awarded 2 patents that showcase his innovative approaches in the field.

Latest Patents

One of his latest patents is titled "Heteroepitaxy by growth of thermally strained homojunction superlattice." This patent discloses methods of fabrication and integrated circuits in GaAs layers on silicon substrates. The gallium arsenide is grown by MBE or MOCVD and contains thermally-strained superlattices. Post-growth high-temperature annealing is employed to lower defect density, confining dislocations to a thin network at the interface of the GaAs buffer layer and the silicon substrate. Another significant patent is the "Binary superlattice tunneling device and method." This invention features a resonant tunneling diode with anode and cathode separated by binary short-period superlattice tunneling barriers, with a quantum well in between. Both enhancement and depletion mode diodes are disclosed in this patent.

Career Highlights

Jhang W Lee is currently associated with Texas Instruments Corporation, where he continues to push the boundaries of semiconductor innovation. His work has significantly impacted the development of advanced electronic devices.

Collaborations

He has collaborated with notable professionals in the field, including Mark A Reed, enhancing the scope and impact of his research.

Conclusion

Jhang W Lee's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of electronic devices.