Jessie C Shan

Title: Innovations of Jessie C Shan

Introduction

Jessie C Shan is a prominent inventor based in Vancouver, WA (US). She has made significant contributions to the field of chemical vapor deposition, particularly in the development of methods for depositing high-density plasma chemical vapor deposition (HDPCVD) oxide layers. With a total of 2 patents, her work has advanced the technology used in semiconductor manufacturing.

Latest Patents

Jessie C Shan's latest patents include:

1. **Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps** - This patent describes a method of forming a HDPCVD oxide layer over metal lines, where the metal lines have gaps with an aspect ratio of two or more. The process involves forming a liner oxide layer over the metal lines and subsequently forming an HDPCVD oxide layer over the liner oxide layer. The key aspect of this method is that the deposition-to-sputter ratio increases as the gaps are filled.

2. **Method for depositing high density plasma chemical vapor deposition** - Similar to her first patent, this method also focuses on forming a HDPCVD oxide layer over metal lines with high aspect ratio gaps. The steps include forming a liner oxide layer and an HDPCVD oxide layer, ensuring that the deposition-to-sputter ratio increases during the filling process.

Career Highlights

Jessie C Shan is currently employed at WaferTech, Inc., where she continues to innovate in the field of semiconductor technology. Her expertise in HDPCVD processes has positioned her as a valuable asset to her company and the industry at large.

Collaborations

Some of her notable coworkers include Chang-Kuei Huang and Steve H Y Yang, who collaborate with her on various projects within WaferTech, Inc.

Conclusion

Jessie C Shan's contributions to the field of chemical vapor deposition are noteworthy, and her patents reflect her innovative spirit and technical expertise. Her work continues to influence advancements in semiconductor manufacturing, showcasing her role as a leading inventor in this domain.