The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jun. 19, 2000
Applicant:
Inventors:
Jessie C. Shan, Vancouver, WA (US);
Chang-Kuei Huang, Camas, WA (US);
Steve H. Y. Yang, Vancouver, WA (US);
Assignee:
Wafertech, Inc., Camas, WA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/434 ; H01L 2/14763 ; H01L 2/1311 ; H01L 2/131 ;
U.S. Cl.
CPC ...
C23C 1/434 ; H01L 2/14763 ; H01L 2/1311 ; H01L 2/131 ;
Abstract
A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.
Quick Actions:
Shan, Jessie. (2002). Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps (U.S. Patent No. 6365015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6365015
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile