El Paso, TX, United States of America

Jeremy L Warren

This inventor holds 5 USPTO granted patents and 3 published patent applications and 1 EPO patent. Top assignees: Cypress Semiconductor Corporation, The United States Government as Represented by the Department of Veterans Affairs, The University of Texas System. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeremy L Warren. Retrieved from https://idiyas.com/inventor/jeremy-l-warren

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0


Average Co-Inventor Count = 6.3

ph-index = 2

Forward Citations = 128(Granted Patents)


Location History:

  • Apple Valley, MN (US) (2012)
  • El Paso, TX (US) (2024)

Company Filing History:


Years Active: 2012-2026

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5 patents (USPTO):Explore Patents

Title: Innovations by Inventor Jeremy Warren in Semiconductor Technology

Introduction

Jeremy Warren, an accomplished inventor based in Apple Valley, MN, has significantly contributed to the field of semiconductor technology. With two patents to his name, he has focused on the integration of non-volatile charge trap memory devices with logic CMOS devices. His work has the potential to enhance the efficiency and performance of semiconductor structures, making them vital in advancing the industry.

Latest Patents

Warren's most recent patent focuses on a semiconductor structure and method for forming an integration of non-volatile charge trap memory devices and logic CMOS devices. This innovation features a substrate housing a non-volatile charge trap memory device in one region and a logic device in another. Notably, the method improves the quality of the blocking layer of the non-volatile charge trap memory device by avoiding standard pre-cleans, such as HF and SC1 cleans. By thermally reoxidizing or nitridizing the blocking layer during the oxidation or nitridation of the logic MOS gate insulator layer, Warren's approach enhances the densification of the blocking layer. Additionally, the use of a multi-layered liner to offset source and drain implants in high voltage logic devices demonstrates a sophisticated solution to block silicidation for the non-volatile charge trap memory device.

Career Highlights

Warren has made his mark in the semiconductor industry while working with Cypress Semiconductor Corporation. His work has positively impacted the development of advanced semiconductor structures, positioning him as a notable figure in this domain. His dedication to innovation and excellence in technology demonstrates his commitment to progress in semiconductor design and manufacturing.

Collaborations

Throughout his career, Jeremy Warren has collaborated with esteemed colleagues including Krishnaswamy Ramkumar and Ravindra Manohar Kapre. These collaborations highlight the importance of teamwork in fostering innovation and propelling advancements in semiconductor technology.

Conclusion

In summary, Jeremy Warren is a prominent inventor whose work at Cypress Semiconductor Corporation has led to valuable patents in semiconductor technology. His latest innovations in integrating non-volatile charge trap memory devices with logic CMOS devices showcase his expertise and contribute to the ongoing evolution of the semiconductor industry. Warren's continuous efforts in research and development ensure that he remains a vital contributor to future advancements in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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