Cypress Semiconductor Corporation

Jeremy L Warren

Krishnaswamy Ramkumar

Ravindra Manohar Kapre

Michael A Mong

Karanjit S Kooner

Ghadeer Al-Humimat

Jacob A Awkal

Hebah G Abdallah

Nguyen L Le

Jamasp Azarnoosh

Peter Dirk Jan Reyntjens

Sagy Charel Levy

Fredrick B Jenne

Igor G Kouznetsov

Sam G Geha

William W C Koutny, Jr

Forceps

A semiconductor structure and method to form the same. The semiconductor structure includes a substrate having a non-volatile charge trap memory device disposed on a first region and a logic device disposed on a second region. A charge trap dielectric stack may be formed subsequent to forming wells and channels of the logic device. HF pre-cleans and SCcleans may be avoided to improve the quality of a blocking layer of the non-volatile charge trap memory device. The blocking layer may be thermally reoxidized or nitridized during a thermal oxidation or nitridation of a logic MOS gate insulator layer to densify the blocking layer. A multi-layered liner may be utilized to first offset a source and drain implant in a high voltage logic device and also block silicidation of the nonvolatile charge trap memory device.

Integration of non-volatile charge trap memory devices and logic CMOS devices

A semiconductor structure and method to form the same. The semiconductor structure includes a substrate having a non-volatile charge trap memory device disposed on a first region and a logic device disposed on a second region. A charge trap dielectric stack may be formed subsequent to forming wells and channels of the logic device. HF pre-cleans and SC1 cleans may be avoided to improve the quality of a blocking layer of the non-volatile charge trap memory device. The blocking layer may be thermally reoxidized or nitridized during a thermal oxidation or nitridation of a logic MOS gate insulator layer to densify the blocking layer. A multi-layered liner may be utilized to first offset a source and drain implant in a high voltage logic device and also block silicidation of the nonvolatile charge trap memory device.

Growing community of inventors

El Paso, TX, United States of America

Jeremy L Warren