Jeong Hun Mun

Title: Innovations of Jeong Hun Mun in Graphene Technology

Introduction

Jeong Hun Mun is a prominent inventor based in Daegu, South Korea. He has made significant contributions to the field of graphene technology, holding a total of 3 patents. His work focuses on methods for growing high-quality graphene layers, which have important applications in various industries.

Latest Patents

One of his latest patents is a "Method for growing high-quality graphene layer." This invention involves a detailed process that includes forming a board layer, a stress reduction layer, and a metal catalyst layer, which serves as a catalyst for the graphene layer formation. The stress reduction layer is crucial as it reduces the stress of the metal thin film, thereby improving the crystallinity and surface roughness of the metal thin film, leading to the effective formation of a high-quality graphene layer.

Another notable patent is the "Method and board for growing high-quality graphene layer using high pressure annealing." This invention relates to a method and board for forming a graphene layer, specifically using high pressure annealing. The process includes forming a reaction barrier layer on a substrate layer and a metal catalyst layer on the reaction barrier layer. The board is subjected to high pressure annealing before the growth of the graphene layer, which helps suppress the migration of metal catalyst atoms.

Career Highlights

Jeong Hun Mun is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to advance his research in graphene technology. His innovative approaches have positioned him as a key figure in the development of high-quality graphene layers.

Collaborations

He has collaborated with Byung Jin Cho, contributing to the advancement of their shared research interests in graphene and its applications.

Conclusion

Jeong Hun Mun's work in graphene technology exemplifies the innovative spirit of modern inventors. His patents not only enhance the understanding of graphene formation but also pave the way for future advancements in the field.