The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 18, 2013
Applicant:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Inventors:
Byung Jin Cho, Daejeon, KR;
Jeong Hun Mun, Daejeon, KR;
Assignee:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/40 (2006.01); C01B 31/04 (2006.01); C23C 14/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C01B 31/0453 (2013.01); C23C 14/024 (2013.01); C23C 14/025 (2013.01); Y10T 428/30 (2015.01); Y10T 428/31678 (2015.04);
Abstract
A method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.