Jeong-Duk Sohn

Title: Jeong-Duk Sohn: Innovator in SRAM Technology

Introduction

Jeong-Duk Sohn is a prominent inventor based in Pleasanton, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of SRAM (Static Random-Access Memory) devices. With a total of three patents to his name, Sohn's work focuses on enhancing the performance and efficiency of memory circuits.

Latest Patents

One of Jeong-Duk Sohn's latest patents is centered around an SRAM cell structure and circuits designed to reduce leakage currents and increase device speed. This innovative SRAM circuit structure allows for the fabrication of various forms of SRAM devices, including single port and dual port RAM devices. The design utilizes separate write and read lines, effectively splitting the circuit into portions that can benefit from differing threshold levels. Additionally, it enables the splitting of read path transistors for connection to a first terminal and a virtual node linked to a source transistor. This structure is particularly advantageous for forming transistors in a combination of NMOS and PMOS, or solely in NMOS. Memory arrays can be organized in various distributed or lumped arrangements, with reference read paths and sense blocks being either shared or dedicated.

Career Highlights

Jeong-Duk Sohn is currently associated with Zmos Technology, Inc., where he continues to innovate in the field of memory technology. His expertise in SRAM design has positioned him as a key player in advancing semiconductor applications.

Conclusion

Jeong-Duk Sohn's contributions to SRAM technology exemplify his commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of memory circuit design, which has the potential to significantly impact the performance of electronic devices.