Seoul, South Korea

Jeong Do Yang

This inventor holds 1 USPTO granted patent. Top assignee: Yonsei University. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong Do Yang. Retrieved from https://idiyas.com/inventor/jeong-do-yang-7aoaf9qz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovations of Jeong Do Yang in Phase Change Memory Technology

Introduction

Jeong Do Yang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory technology, particularly through his innovative work on phase change memory devices.

Latest Patents

One of his notable patents is titled "Phase change memory device comprising bismuth-tellurium nanowires." This invention relates to a phase change memory device that utilizes bismuth-tellurium nanowires. The nanowires, which exhibit PRAM characteristics, can be prepared using a porous nano template without requiring high-temperature processes. This advancement allows for the effective use of the phase change characteristics of the nanowires to enhance memory device performance. Jeong Do Yang holds 1 patent in this area.

Career Highlights

Jeong Do Yang is affiliated with Yonsei University, where he continues to engage in research and development in the field of memory technology. His work has garnered attention for its potential applications in improving data storage solutions.

Collaborations

He collaborates with notable colleagues, including Kyung Hwa Yoo and Nal Ae Han, contributing to a dynamic research environment that fosters innovation.

Conclusion

Jeong Do Yang's contributions to phase change memory technology highlight his role as an influential inventor in the field. His innovative approaches and collaborations continue to pave the way for advancements in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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