The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jan. 21, 2011
Applicants:
Kyung Hwa Yoo, Seoul, KR;
Nal AE Han, Busan, KR;
Sung IN Kim, Seoul, KR;
Jeong DO Yang, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a phase change memory device comprising bismuth-tellurium nanowires. More specifically, the bismuth-tellurium nanowires having PRAM characteristics may be prepared by using a porous nano template without any high temperature process and said nanowires may be used in the phase change memory device by using their phase change characteristics to identify memory characteristics.