Hong Kong, China

Jensen Li

This inventor holds 1 USPTO granted patent. Top assignee: The Hong Kong University of Science and Technology. Active years: 2004.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Jensen Li: Innovator in Planar Band Gap Materials

Introduction

Jensen Li is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of materials science, particularly in the development of planar materials with unique bandgap properties. His innovative work has the potential to impact various applications in electronics and photonics.

Latest Patents

Jensen Li holds a patent for his invention titled "Planar Band Gap Materials." This invention relates to materials that exhibit specific bandgap properties, which are crucial for controlling electronic and optical behaviors. The materials are created by depositing conductive fractal patterns on a non-conducting substrate. The locations of the bandgaps are determined by various parameters, including the number of fractal levels and the dimensions of the fractal mother element. Notably, these bandgaps can be actively controlled by injecting current into the conducting pattern. He has 1 patent to his name.

Career Highlights

Jensen Li is affiliated with The Hong Kong University of Science and Technology, where he conducts research and develops innovative materials. His work is recognized for its potential applications in advanced technologies, making him a valuable asset to the academic and scientific community.

Collaborations

Some of his notable coworkers include Weijia Wen and Ping Sheng. Their collaborative efforts contribute to the advancement of research in materials science and engineering.

Conclusion

Jensen Li's contributions to the field of planar band gap materials highlight his innovative spirit and dedication to advancing technology. His work not only enhances our understanding of material properties but also paves the way for future advancements in various applications.

Profile summary based on public USPTO records.
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