The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Oct. 26, 2001
Applicant:
Inventors:
Weijia Wen, Kowloon, HK;
Ping Sheng, Kowloon, HK;
Che Ting Chan, New Territories, HK;
Weikun Ge, New Territories, HK;
Lei Zhou, Kowloon, HK;
Jensen Li, Chai Wan, HK;
Assignee:
The Hong Kong University of Science and Technology, Kowloon, HK;
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/502 ; H01Q 1/524 ;
U.S. Cl.
CPC ...
H01Q 1/502 ; H01Q 1/524 ;
Abstract
The present invention relates to planar materials having bandgap properties. The materials are formed by depositing conductive fractal patterns on a non-conducting substrate. The bandgap location(s) are defined by parameters including the number of fractal levels, and the dimension of the fractal mother element. The bandgaps can also be actively controlled by injecting current into the conducting pattern.