Company Filing History:
Years Active: 2025
Title: Jens Baringhaus: Innovator in Vertical Field Effect Transistors
Introduction
Jens Baringhaus is a notable inventor based in Sindelfingen, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical field effect transistors. With a total of 5 patents to his name, Baringhaus continues to push the boundaries of innovation in this area.
Latest Patents
Baringhaus's latest patents include groundbreaking designs for vertical field effect transistors. One of his notable inventions is a vertical field effect transistor that features a drift area, a semiconductor fin, a connection area, and a gate electrode. This design allows for improved performance by optimizing the lateral extension of the semiconductor fin in different sections. Another significant patent involves a vertical fin field-effect transistor arrangement, which includes an n-doped source region, a drift region, and a channel region situated vertically. This innovative design enhances the efficiency and functionality of the transistor.
Career Highlights
Jens Baringhaus is currently employed at Robert Bosch GmbH, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of vertical field effect transistors, making them more efficient and reliable for various applications.
Collaborations
Baringhaus has collaborated with notable colleagues such as Daniel Krebs and Dick Scholten. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Jens Baringhaus is a prominent figure in the field of semiconductor technology, with a focus on vertical field effect transistors. His contributions through patents and collaborations highlight his commitment to advancing this critical area of innovation.