The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Sep. 24, 2020
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Assignee:
ROBERT BOSCH GMBH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/63 (2025.01); H10D 12/01 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/635 (2025.01); H10D 12/031 (2025.01); H10D 30/021 (2025.01); H10D 30/025 (2025.01); H10D 62/109 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01);
Abstract
A vertical field effect transistor. The vertical field effect transistor includes: a drift area; a semiconductor fin on or above the drift area; a connection area on or above the semiconductor fin; and a gate electrode, which is formed adjacent to at least one side wall of the semiconductor fin, the semiconductor fin, in a first section, which is situated laterally adjacent to the gate electrode, having a lesser lateral extension than in a second section, which contacts the drift area, and/or than in a third section, which contacts the connection area.