Company Filing History:
Years Active: 2025
Title: Discovering the Innovations of Inventor Daniel Krebs
Introduction
Daniel Krebs, an inventive mind hailing from Aufhausen, Germany, has made significant contributions to the field of semiconductor technology. With a portfolio consisting of two patents, Krebs demonstrates a remarkable capability to innovate in highly specialized areas of electronics, particularly focusing on vertical fin field-effect transistors.
Latest Patents
Krebs' latest patents revolve around advanced designs and methods for vertical fin field-effect transistors. His primary inventions include:
1. **Vertical Fin Field Effect Transistor:** This innovative transistor features a semiconductor fin with an n-doped source region, an n-doped drift region, and an n-doped channel region within the fin. The design includes a horizontally adjacent gate region insulated by a gate dielectric, alongside boundary surface charges that enhance its performance. A p-doped gate shielding region is incorporated beneath the gate, ensuring effective conductivity and functionality between the gate, channel, and source contact.
2. **Vertical Field-Effect Transistor and Method for Forming Same:** This patent details a vertical field-effect transistor that comprises a drift region with a first conductivity type and a semiconductor fin situated over it. The invention highlights an electrically conductive region that connects the source/drain electrode to the drift region, showcasing a limiting structure that optimally confines the conductive channel to enhance efficiency and performance.
Career Highlights
Daniel Krebs is currently associated with Robert Bosch GmbH, a leader in technology and engineering solutions. His work within such a prestigious company underscores his expertise and commitment to advancing electrical engineering. Krebs' patents exhibit his innovative mindset and align with the ongoing technological progress within the industry.
Collaborations
Throughout his career, Daniel has collaborated with notable colleagues such as Jens Baringhaus and Dick Scholten. Working alongside such talented individuals has likely contributed to the success and realization of his inventive concepts, leading to impactful advancements in semiconductor technology.
Conclusion
In conclusion, Daniel Krebs stands out as a prominent inventor in the field of vertical fin field-effect transistors. His two innovative patents reflect his dedication to advancing technology and improving electronic devices. Krebs' contributions not only enhance the capabilities of the semiconductor industry but also pave the way for future innovations in electronic engineering.