The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Jul. 01, 2020
Robert Bosch Gmbh, Stuttgart, DE;
Jens Baringhaus, Sindelfingen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A vertical field effect transistor, including a drift region having a first conductivity type, a trench structure on or above the drift region, a shielding structure, and a source/drain electrode. The trench structure includes at least one side wall at which a field effect transistor (FET) channel region is formed. The FET channel region includes a III-V heterostructure for forming a two-dimensional electron gas at a boundary surface of the III-V heterostructure. The shielding structure is situated laterally adjacent to the at least one side wall of the trench structure and extends vertically into the drift region or vertically further in the direction of the drift region than the trench structure. The shielding structure has a second conductivity type that differs from the first conductivity type. The source/drain electrode is electroconductively connected to the III-V heterostructure of the trench structure and to the shielding structure.