Jeng Hsing Jang

Title: Innovations by Jeng Hsing Jang

Introduction

Jeng Hsing Jang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of circuit structures, holding two patents that showcase his innovative approach to technology. His work primarily focuses on enhancing the functionality and efficiency of electronic components.

Latest Patents

Jang's latest patents include a "Circuit structure with conductive and depletion regions to form tunable capacitors and resistors." This invention features a semiconductor substrate with various conductive regions and depletion regions, allowing for the control of capacitance and resistance through applied voltages. Another significant patent is the "Circuit structure with vertical double gate," which involves a semiconductor substrate with a depression, incorporating insulating layers and conductors to improve electronic performance.

Career Highlights

Jeng Hsing Jang is associated with Nan Ya Technology Corporation, where he applies his expertise in circuit design and semiconductor technology. His innovative patents reflect his commitment to advancing electronic components and their applications in various industries.

Collaborations

Some of Jang's coworkers include Yi Chun Chen and Hsien Wen Liu, who contribute to the collaborative environment at Nan Ya Technology Corporation.

Conclusion

Jeng Hsing Jang's contributions to circuit structure innovations highlight his role as a leading inventor in the field. His patents not only demonstrate his technical skills but also pave the way for future advancements in electronic technology.