Jei-Feng Hwang

Title: Innovations of Jei-Feng Hwang in High Voltage Transistors

Introduction

Jei-Feng Hwang is a notable inventor based in Chu-Pei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the design of high voltage bipolar transistors. With a total of 7 patents to his name, Hwang's work has the potential to impact various applications in electronics.

Latest Patents

One of Hwang's latest patents is focused on a high voltage transistor utilizing a P+ buried layer. This innovative design replaces the conventional buried subcollector, which is typically N+ in an NPN device, with a buried P+ layer. The introduction of this P+ layer facilitates pinch-off between itself and the bipolar base, enabling much higher breakdown voltages. Notably, this device does not break down at the bottom of the base-collector junction, which is a common weak point in traditional devices. The manufacturing process for this device is also described in the patent, highlighting that the N type epitaxial layer grown over the P+ layer is only about half the thickness of that in conventional devices. This new process is fully compatible with standard BiCMOS processes and offers a lower cost solution.

Career Highlights

Jei-Feng Hwang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the semiconductor industry. His work has garnered attention for its practical applications and advancements in technology.

Collaborations

Hwang has collaborated with notable colleagues, including Jun-Lin Tsai and Ruey-Hsin Liu, contributing to the development of cutting-edge technologies in their field.

Conclusion

Jei-Feng Hwang's contributions to high voltage transistor technology exemplify the importance of innovation in the semiconductor industry. His patents reflect a commitment to advancing electronic device performance and manufacturing efficiency.