Boise, ID, United States of America

Jeffrey W Honeycutt

This inventor holds 40 USPTO granted patents and 1 published patent application, primarily in Semiconductor Processing. Top assignee: Micron Technology Incorporated. Active years: 1997-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeffrey W Honeycutt. Retrieved from https://idiyas.com/inventor/jeffrey-w-honeycutt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 85.0

Average Co-Inventor Count = 1.8

ph-index = 7

Forward Citations = 200(Granted Patents)


Company Filing History:


Years Active: 1997-2008

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Areas of Expertise:
Semiconductor Substrate
Lightly Doped Drain
MOS Transistor
Gettering Regions
Photoresist Material
Field Isolation
Transistor Structures
Alignment Diffraction Grating
VLSI Contact
Germanium Layer
Electrical Shorts
SRAM Cells
40 patents (USPTO):Explore Patents

Title: Innovations of Jeffrey W. Honeycutt in Semiconductor Technology

Introduction

Jeffrey W. Honeycutt, based in Boise, Idaho, is a prominent inventor with an impressive record of 40 patents to his name. His work primarily focuses on advancements in semiconductor technologies, significantly contributing to the field through novel methodologies and inventions.

Latest Patents

Among his latest patents, two stand out for their innovative approaches. The first patent, titled "Methods of Processing a Semiconductor Substrate," describes a sophisticated method for processing semiconductor substrates. This invention covers the provision of a semiconductor substrate with specific outer surface characteristics and outlines a unique layering system involving amorphous carbon and resist layers. The innovation allows for effective patterning and processing of the substrate inwardly of a mask formed during the procedure.

The second patent, "Lightly Doped Drain MOS Transistor," presents a method for fabricating MOS transistors in semiconductor substrates. This invention focuses on a systematic approach to constructing a gate oxide layer, forming sidewall spacers, and creating source and drain regions through precise ion implantation. The innovative techniques employed in this patent enhance the performance and efficiency of MOS transistors.

Career Highlights

Jeffrey W. Honeycutt is currently associated with Micron Technology Incorporated, a leading company in memory and semiconductor technology. His tenure at Micron has been marked by groundbreaking contributions to the industry, making him a vital asset in the pursuit of innovation within semiconductor manufacturing.

Collaborations

Throughout his career, Jeffrey has collaborated with notable coworkers such as Fernando N. Gonzalez and Sujit Sharan. These collaborations have fostered a rich exchange of ideas, bolstering the innovative environment at Micron Technology Incorporated and leading to numerous advancements in semiconductor technology.

Conclusion

Jeffrey W. Honeycutt exemplifies the spirit of innovation in the semiconductor industry. His extensive portfolio of patents and collaborations showcases his commitment to advancing technology. As he continues to develop and refine methods in semiconductor processing, his contributions are sure to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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