Albany, NY, United States of America

Jeffrey Shearer

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Jeffrey Shearer

Introduction

Jeffrey Shearer is an accomplished inventor based in Albany, NY (US). He has made significant contributions to the field of semiconductor technology. With a focus on innovative designs, Shearer has developed a patent that enhances the efficiency of semiconductor devices.

Latest Patents

One of Jeffrey Shearer's notable patents is titled "FinFET gate cut after dummy gate removal." This invention involves semiconductor devices that include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin, with source and drain regions created on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack, and a gate cut plug is formed from a dielectric material at the end of the first gate stack. This innovation aims to improve the performance and reliability of semiconductor devices.

Career Highlights

Shearer is currently employed at Adeia Semiconductor Solutions LLC, where he continues to work on cutting-edge technologies in the semiconductor industry. His expertise and innovative mindset have positioned him as a valuable asset to his company.

Collaborations

Throughout his career, Jeffrey has collaborated with talented professionals, including John R. Sporre and Siva Kanakasabapathy. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jeffrey Shearer is a prominent inventor whose work in semiconductor technology has led to significant advancements in the field. His patent on FinFET gate cut technology exemplifies his commitment to innovation and excellence.

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