Medina, MN, United States of America

Jeffrey Sather

This inventor holds 6 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2005-2010.


% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 43(Granted Patents)


Company Filing History:


Years Active: 2005-2010

Loading Chart...
6 patents (USPTO):Explore Patents

Title: The Innovations of Jeffrey Sather

Introduction

Jeffrey Sather is a notable inventor based in Medina, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. With a total of 6 patents to his name, Sather's work is at the forefront of advancing memory storage solutions.

Latest Patents

One of Sather's latest patents is for Double Density MRAM with Planar Processing. This innovation addresses the semiconductor industry's need to replace traditional volatile memory devices with improved non-volatile memory options. The increasing demand for advanced, efficient, and non-volatile data retention techniques has spurred the development of integrated magnetic memory structures. Sather's work focuses on fabrication techniques for magnetic memory structures in a high-density configuration, which includes efficient programming methods for these high-density magnetic memory systems.

Career Highlights

Sather's career is marked by his role at Micron Technology Incorporated, where he has been instrumental in pushing the boundaries of memory technology. His expertise in semiconductor innovations has positioned him as a key player in the industry.

Collaborations

Throughout his career, Sather has collaborated with talented individuals such as Allan T Hurst and Jason Bryce Gadbois. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Jeffrey Sather's contributions to the semiconductor industry through his innovative patents highlight his commitment to advancing memory technology. His work continues to influence the future of non-volatile memory devices.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…