Chaska, MN, United States of America

Jeffrey Lauerhaas

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeffrey Lauerhaas. Retrieved from https://idiyas.com/inventor/jeffrey-lauerhaas

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jeffrey Lauerhaas and Plasma Processing Innovation.

Introduction

Jeffrey Lauerhaas is an inventor associated with Chaska, Minnesota, and Tokyo Electron Limited. His patent work includes an invention concerning plasma processing equipment and methods for processing wafers.

Latest Patents

The provided information lists one patent for Lauerhaas: “Plasma Processing Method and Apparatus.” The disclosed apparatus uses a plasma generation source and a nozzle to direct a plasma stream toward a wafer inside a plasma chamber. An outer annulus surrounds the nozzle above the wafer, while a gas exhaust positioned between the nozzle and annulus connects to a vacuum pump. This arrangement describes a system for directing plasma and managing exhaust during wafer processing. The supplied data identifies 1 patent and does not specify its filing or grant date.

Career Highlights

Lauerhaas is associated with Tokyo Electron Limited, a company whose work includes semiconductor manufacturing equipment. His listed patent reflects an engineering focus on plasma delivery and exhaust management in wafer-processing systems.

Collaborations

The provided information names Lance Van Elsen as Lauerhaas’s coworker. It does not specify whether Van Elsen collaborated on the patent.

Conclusion

Jeffrey Lauerhaas’s listed patent describes an apparatus for directing plasma onto wafers while managing chamber exhaust, highlighting his connection to semiconductor-processing innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…