Jeffrey L Dittmar

Title: The Innovations of Jeffrey L. Dittmar

Introduction

Jeffrey L. Dittmar is a notable inventor based in Troy, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of germanium-based devices. With a total of 2 patents to his name, Dittmar's work has garnered attention in the industry.

Latest Patents

Dittmar's latest patents focus on the use of embedded carbon-doped germanium as a stressor for germanium nFET devices. These patents describe how carbon-doped germanium stressor regions are formed in the nFET device region of a germanium substrate. The process involves an epitaxial growth technique utilizing monomethylgermane (GeH–CH) as the carbon source. The innovation lies in the ability of carbon-doped germanium stressor regions to yield more strain in less volume, as a carbon atom is significantly smaller than a silicon atom.

Career Highlights

Dittmar is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the performance of germanium nFET devices, which are crucial for modern electronic applications.

Collaborations

Throughout his career, Dittmar has collaborated with several talented individuals, including Keith E. Fogel and Sebastian Naczas. These collaborations have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Jeffrey L. Dittmar's contributions to the field of semiconductor technology, particularly through his patents on carbon-doped germanium stressors, highlight his role as a leading inventor in the industry. His work at IBM and collaborations with other experts further emphasize his impact on advancing electronic device performance.