The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Aug. 04, 2016
International Business Machines Corporation, Armonk, NY (US);
Jeffrey L. Dittmar, Troy, NY (US);
Keith E. Fogel, Hopewell Junction, NY (US);
Sebastian Naczas, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH—CH) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.