Jeffery L Libbert

Title: Jeffery L. Libbert: Innovator in Silicon-On-Insulator Technology

Introduction

Jeffery L. Libbert is a notable inventor based in O'Fallon, Missouri, recognized for his contributions to semiconductor technology. He holds two patents that reflect his expertise in high resistivity silicon-on-insulator structures. His work has significant implications for the stability and performance of semiconductor devices.

Latest Patents

Libbert's latest patents include a high resistivity silicon-on-insulator structure and method of manufacture. This multilayer structure comprises a semiconductor on insulator configuration that features an insulating layer designed to enhance the stability of the underlying charge trapping layer. This innovation is crucial for advancing semiconductor technology and improving device reliability.

Career Highlights

Throughout his career, Libbert has made substantial contributions to the field of semiconductor manufacturing. His work at GlobalWafers Co., Ltd. has positioned him as a key player in the industry, where he continues to develop cutting-edge technologies that push the boundaries of what is possible in semiconductor design.

Collaborations

Libbert has collaborated with esteemed colleagues such as Qingmin Liu and Gang Wang. These partnerships have fostered an environment of innovation and have led to significant advancements in their shared field of expertise.

Conclusion

Jeffery L. Libbert's work in high resistivity silicon-on-insulator technology exemplifies his commitment to innovation in the semiconductor industry. His patents and collaborations highlight his role as a leading inventor in this critical area of technology.