Somerville, NJ, United States of America

Jean-Sebastien Lehn

This inventor holds 1 USPTO granted patent. Top assignee: Merck Patent Gmbh. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jean-Sebastien Lehn. Retrieved from https://idiyas.com/inventor/jean-sebastien-lehn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: The Innovations of Jean-Sebastien Lehn

Introduction

Jean-Sebastien Lehn is a notable inventor based in Somerville, NJ (US). He has made significant contributions to the field of materials science, particularly in the deposition of thin films. His work has implications for various applications in technology and manufacturing.

Latest Patents

Jean-Sebastien Lehn holds a patent for the "Deposition of molybdenum thin films using a molybdenum carbonyl precursor." This patent discloses transition metal precursors and methods for depositing metal thin films. The advantageous properties of these precursors and methods are highlighted, along with the superior films that can be achieved through their use.

Career Highlights

Lehn is currently associated with Merck Patent GmbH, where he continues to innovate and develop new technologies. His expertise in thin film deposition has positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Jean-Sebastien has collaborated with notable colleagues, including Guo Liu and Mark C Potyen. These collaborations have further enhanced his research and development efforts.

Conclusion

Jean-Sebastien Lehn's contributions to the field of thin film deposition exemplify the impact of innovative thinking in technology. His work continues to influence advancements in materials science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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