Jean-Baptiste Dory

Title: Jean-Baptiste Dory: Innovator in OxRAM Technology

Introduction

Jean-Baptiste Dory is a notable inventor based in Grenoble, France. He has made significant contributions to the field of resistive memory technology, particularly through his innovative methods for manufacturing OxRAM-type memory cells. His work is characterized by a focus on enhancing the efficiency and performance of memory storage solutions.

Latest Patents

Jean-Baptiste Dory holds a patent for a "Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell." This patent outlines a detailed process that includes forming a TiN lower electrode, implanting silicon atoms into the lower electrode with specific doses and acceleration voltages, and depositing an active layer and upper electrode. The method aims to achieve a maximum silicon concentration at a precise depth, thereby optimizing the performance of the memory cell. He has 1 patent to his name.

Career Highlights

Throughout his career, Dory has worked with prominent organizations, including the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and Weebit Nano Ltd. His experience in these institutions has allowed him to refine his expertise in memory technologies and contribute to advancements in the field.

Collaborations

Dory has collaborated with notable professionals in his field, including Gabriel Molas and Anthonin Verdy. These collaborations have further enriched his work and have led to innovative developments in resistive memory technology.

Conclusion

Jean-Baptiste Dory's contributions to the field of OxRAM technology highlight his role as a key innovator in memory solutions. His patent and career achievements reflect his commitment to advancing technology in this critical area.