Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Weebit Nano Ltd.

Jean-Baptiste Dory

Gabriel Molas

Jean-François Nodin

Anthonin Verdy

A method for manufacturing an OxRAM resistive memory cell, includes forming a TiN lower electrode, firstly implanting Si atoms into the lower electrode with a first implantation dose and a first implantation acceleration voltage, the first implantation dose being strictly positive and strictly lower than 0.7·10cm, secondly implanting Si atoms into the lower electrode with a second implantation dose and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, the second implantation dose being strictly positive and strictly lower than 0.6·10cm, the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum Si concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode, depositing an active layer onto the lower electrode implanted, depositing an upper electrode onto the active layer.

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Grenoble, France

Jean-Baptiste Dory